Low temperature growth of epitaxial ferroelectric BaTiO<sub>3</sub>
نویسندگان
چکیده
BaTiO3 exhibits several functional properties, such as high dielectric constant, large Pockels coefficient, and strong ferroelectricity/piezoelectricity. These properties can be used for a variety of applications, ferroelectric tunnel junctions in non-volatile memory devices. To achieve large-scale integration BaTiO3, however, one requires the synthesis high-quality films at low temperatures order to compatible with thermal budget electronic processes use today. Here, we describe thin by molecular beam epitaxy find that coherently strained grown 310 °C. Using reflection energy diffraction, demonstrate surface mobility BaO TiO2 adatoms is enough promote crystal growth temperatures. A clear polarization switching observed using piezoresponse force microscopy. Our results pave way toward mainstream electronics platforms.
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ژورنال
عنوان ژورنال: APL Materials
سال: 2021
ISSN: ['2166-532X']
DOI: https://doi.org/10.1063/5.0046624